BOJACK IRF740 MOSFET Transistors IRF740N 10A 400V N-Channel Field Effect Transistor TO-220 (Pack of 10)
BOJACK IRF740 MOSFET Transistors IRF740N 10A 400V N-Channel Field Effect Transistor TO-220 (Pack of 10)
BOJACK IRF740 MOSFET Transistors IRF740N 10A 400V N-Channel Field Effect Transistor TO-220 (Pack of 10)
BOJACK IRF740 MOSFET is a field effect transistor that is used in analogue and digital circuits. Basic parameters: The IRF740N is in a TO-220 case Available on resistor Rds (on): 0.54 ohm. Voltage Vgs highest: 20 V. Number of stitches: 3. Operating temperature: -65 °C to +150 °C. Heat resistance transition to housing A: 1.0 °C / W. Voltage Vds typical: 400 V. Current ID continuous: 10A. Current Idm pulse: 40A. Surface-mounted device: push-through installation. Lead-free environmental protection
Product Features
- Transistors type: MOSFET
- Transistors polarity: N-channel
- Drain current (Id Max): 10 A
- Voltage Vds max: 400 V
- Power (max. ): 125 W
Original: $86.33
-70%$86.33
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BOJACK IRF740 MOSFET Transistors IRF740N 10A 400V N-Channel Field Effect Transistor TO-220 (Pack of 10)
BOJACK IRF740 MOSFET Transistors IRF740N 10A 400V N-Channel Field Effect Transistor TO-220 (Pack of 10)
BOJACK IRF740 MOSFET is a field effect transistor that is used in analogue and digital circuits. Basic parameters: The IRF740N is in a TO-220 case Available on resistor Rds (on): 0.54 ohm. Voltage Vgs highest: 20 V. Number of stitches: 3. Operating temperature: -65 °C to +150 °C. Heat resistance transition to housing A: 1.0 °C / W. Voltage Vds typical: 400 V. Current ID continuous: 10A. Current Idm pulse: 40A. Surface-mounted device: push-through installation. Lead-free environmental protection
Product Features
- Transistors type: MOSFET
- Transistors polarity: N-channel
- Drain current (Id Max): 10 A
- Voltage Vds max: 400 V
- Power (max. ): 125 W
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
BOJACK IRF740 MOSFET Transistors IRF740N 10A 400V N-Channel Field Effect Transistor TO-220 (Pack of 10)
BOJACK IRF740 MOSFET is a field effect transistor that is used in analogue and digital circuits. Basic parameters: The IRF740N is in a TO-220 case Available on resistor Rds (on): 0.54 ohm. Voltage Vgs highest: 20 V. Number of stitches: 3. Operating temperature: -65 °C to +150 °C. Heat resistance transition to housing A: 1.0 °C / W. Voltage Vds typical: 400 V. Current ID continuous: 10A. Current Idm pulse: 40A. Surface-mounted device: push-through installation. Lead-free environmental protection
Product Features
- Transistors type: MOSFET
- Transistors polarity: N-channel
- Drain current (Id Max): 10 A
- Voltage Vds max: 400 V
- Power (max. ): 125 W
